Structure of Defects at the GaAs(100)-c(8x2) studied by

The structure of the Ga terminated GaAs(100)-c(8x2) surface has been a topic under debate during the last decade. A complex model involving strong reconstructions was recently proposed after extensive Total Energy calculation[1], and was also confirmed by Low Energy Electron Diffraction (LEED) dynamical calculations[1]. Further studies, based on X-ray Diffraction techniques (SXRD), basically corroborate this model[2,3], although it was pointed out the need to introduce partial occupations for certain atoms in the unit cell, stressing the relevance of defects on this surface.